Search Thermo Fisher Scientific
Semiconductor Analysis
Semiconductor TEM Metrology
Metrology with transmission electron microscopy for fast, automated, and highly precise measurements, accelerating time-to-data and maximizing yields.
Join the Conversation
Semiconductor devices are becoming more complex due to the demand for faster speeds, shorter time-to-yield, and time-to-market. Scanning transmission electron microscopy (S)TEM metrology has become a necessary element of all leading-edge wafer fabrication workflows, since highly specific measurements are needed to generate statistically relevant data with sub-angstrom accuracy. This data allows manufacturers to calibrate toolsets, diagnose failure mechanisms, and optimize overall process yield.
Thermo Fisher Scientific offers metrology workflows that are flexible enough to enable manual, semi-automated, or even fully automated solutions, depending on your needs. The Thermo Scientific Metrios AX System is the first TEM designed to provide the fast, precise measurements that semiconductor manufacturers need to develop and control their wafer fabrication processes. Learn more by visiting the Metrios product page below.
TEM metrology workflow example
Example of the STEM metrology dimensions used to assess the line roughness (LER/LWR) on a 300 mm post-lithography (EUV exposure) and post-etch wafer. This mimics part of a multiple step patterning process used to produce gate fins for the 10 nm technology node.
Example of the STEM metrology dimensions used to assess the line roughness (LER/LWR) on a 300 mm post-lithography (EUV exposure) and post-etch wafer. This mimics part of a multiple step patterning process used to produce gate fins for the 10 nm technology node.
Metrology extracted from energy-dispersive X-ray spectroscopy (EDS) elemental maps of a planar-cut 3D NAND memory bit, measuring the circular dimensions of poly-Si channel, blocking oxide, tunnel oxide, and Si3N4 trap layers.
An example of automated metrology measurements taken for a 14-nm fin-cut sample, to measure the gate oxide dimensions as well as the fin height relative to two important process etch steps.
Example of the STEM metrology dimensions used to assess the line roughness (LER/LWR) on a 300 mm post-lithography (EUV exposure) and post-etch wafer. This mimics part of a multiple step patterning process used to produce gate fins for the 10 nm technology node.
Metrology extracted from energy-dispersive X-ray spectroscopy (EDS) elemental maps of a planar-cut 3D NAND memory bit, measuring the circular dimensions of poly-Si channel, blocking oxide, tunnel oxide, and Si3N4 trap layers.
An example of automated metrology measurements taken for a 14-nm fin-cut sample, to measure the gate oxide dimensions as well as the fin height relative to two important process etch steps.
Desarrollo y trazabilidad de semiconductores
Microscopía electrónica avanzada, haz de iones enfocado y técnicas analíticas asociadas para identificar soluciones viables y métodos de diseño para la fabricación de dispositivos semiconductores de alto rendimiento.
Caracterización física y química
La demanda continua de los consumidores impulsa la creación de dispositivos electrónicos más pequeños, más rápidos y más baratos. Su producción se basa en instrumentos y flujos de trabajo de alta productividad que generan imágenes, analizan y caracterizan una amplia gama de semiconductores y dispositivos de visualización.
Metrología y rampa de producción
Ofrecemos capacidades analíticas avanzadas para el análisis de defectos, metrología y control de procesos, diseñadas para ayudar a aumentar la productividad y mejorar el rendimiento en una amplia gama de aplicaciones y dispositivos semiconductores.
Materiales semiconductores y caracterización de dispositivos
A medida que los dispositivos semiconductores se reducen y se vuelven más complejos, se necesitan nuevos diseños y estructuras. Los flujos de trabajo de análisis en 3D de alta productividad pueden reducir el tiempo de desarrollo de dispositivos, maximizar el rendimiento y garantizar que los dispositivos satisfacen las necesidades futuras del sector.
Style Sheet for Komodo Tabs
Style Sheet to change H2 style to p with em-h2-header class
Hoja de estilo para tarjetas originales instrumentos
Style Sheet to change H2 style to p with em-h2-header class
Style Sheet for Support and Service footer
Style Sheet for Fonts
Style Sheet for Cards
Servicios de microscopía electrónica para
Semiconductores
Para garantizar un rendimiento óptimo del sistema, le proporcionamos acceso a una red de expertos de primer nivel en servicios de campo, asistencia técnica y piezas de repuesto certificadas.
